ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,387, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Chin-Hung Chen (Tainan City, Taiwan), Ssu-I Fu (Kaohsiung City, Taiwan), Yu-Hsiang Lin (New Taipei City, Taiwan), Po-Kuang Hsieh (Kaohsiung City, Taiwan), Jia-He Lin (New Taipei City, Taiwan) and Sheng-Yao Huang (Kaohsiung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high-voltage (HV) region and a medium-voltage (MV) region, forming a first trench on the HV region,...