US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Wakeup-free ferroelectric memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,381, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Wakeup-free ferroelectric memory device" was invented by Mickey Hsieh (Hsin-Chu, Taiwan), Chun-Yang Tsai (Hsinchu, Taiwan), Kuo-Ching Huang (Hsinchu, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan), Pili Huang (Hsin-Chu, Taiwan), Cheng-Jun Wu (Hsin-Chu, Taiwan) and Chao-Yang Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for forming a ferroelectric memory device. The method includes forming a dielectric layer over a semiconductor substrate and forming a first conductive layer over the dielectri...