US Patent Issued to GLOBALFOUNDRIES U.S. on April 14 for "Device over patterned buried porous layer of semiconductor material" (Vermont, New York, Massachusetts Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,493, issued on April 14, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "Device over patterned buried porous layer of semiconduc... Read More

US Patent Issued to GLOBALFOUNDRIES U.S. on April 14 for "Device over patterned buried porous layer of semiconductor material" (Vermont, New York, Massachusetts Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,493, issued on April 14, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "Device over patterned buried porous layer of semiconduc... Read More

US Patent Issued to Intel on April 14 for "Gate end cap and boundary placement in transistor structures for N-metal oxide semiconductor (N-MOS) performance tuning" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,494, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Gate end cap and boundary placement in transistor structures ... Read More

US Patent Issued to Intel on April 14 for "Gate end cap and boundary placement in transistor structures for N-metal oxide semiconductor (N-MOS) performance tuning" (Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,494, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Gate end cap and boundary placement in transistor structures ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Semiconductor device with multi-threshold gate structure" (Taiwanese, American, Malaysian Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,495, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with multi-t... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Semiconductor device with multi-threshold gate structure" (Taiwanese, American, Malaysian Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,495, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with multi-t... Read More

US Patent Issued to International Business Machines on April 14 for "Epitaxy everywhere based self-aligned direct backside contact" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,496, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Epitaxy everywhere based self-aligned dire... Read More

US Patent Issued to International Business Machines on April 14 for "Epitaxy everywhere based self-aligned direct backside contact" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,496, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Epitaxy everywhere based self-aligned dire... Read More

US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... Read More

US Patent Issued to TCL China Star Optoelectronics Technology on April 14 for "Thin film transistor and array substrate" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,497, issued on April 14, was assigned to TCL China Star Optoelectronics Technology Co. Ltd. (Shenzhen, China). "Thin film transistor and a... Read More

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