US Patent Issued to GLOBALFOUNDRIES U.S. on April 14 for "Device over patterned buried porous layer of semiconductor material" (Vermont, New York, Massachusetts Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,493, issued on April 14, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Device over patterned buried porous layer of semiconductor material" was invented by Mark D. Levy (Williston, Vt.), Qizhi Liu (Lexington, Mass.) and Jeonghyun Hwang (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a patterned buried porous layer of semiconductor material and a device over the patterned buried porous layer, and methods of manufacture. The structure includes: a semiconductor substrate includes a patterned buried porous layer within the semiconductor substr...