US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Semiconductor device with multi-threshold gate structure" (Taiwanese, American, Malaysian Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,495, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with multi-threshold gate structure" was invented by Chung-Liang Cheng (Changhua County, Taiwan), Peng-Soon Lim (Johor, Malaysia), Ziwei Fang (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device that includes a substrate and a first transistor on the substrate. The first transistor includes a first gate structure and the first gate structure includes a gate dielectric layer and a first work function layer on the gate diele...