India, Aug. 21 -- As conventional silicon semiconductor technology approaches its physical limits, 2D semiconductors are increasingly viewed as a key enabler for extending Moore's Law.

According to TechNews, citing Taiwan's National Science and Technology Council (NSTC), a research team led by Dr. Iuliana Radu of TSMC, in collaboration with National Yang Ming Chiao Tung University (NYCU), has developed a high-performance monolayer molybdenum disulfide (MoS₂) top-gate transistor by addressing the long-standing interface challenges facing 2D semiconductors. The study was published in Nature Electronics.

The report explains that as silicon transistors approach their physical scaling limits, shrinking channel dimensions lead to higher...