India, June 12 -- While SK hynix had only last week outlined plans to double capacity over the next five years, the memory giant is now signaling an even more aggressive expansion across both DRAM and NAND.

According to Nikkei, citing Chairman Chey Tae-won, the company is targeting a three-fold increase in wafer output by 2034. Separately, The Elec reports that SK hynix is preparing to begin mass production of its 375-layer NAND by year-end.

DRAM capacity expansion accelerated by a decade

Nikkei reports that SK hynix is building four semiconductor fabs in Yongin, with the first facility expected to begin operations in early 2027. The original schedule had stretched to 2045, but the timeline has been pulled forward by roughly a decade, ...