India, Oct. 28 -- Shanghai Jiachi Power Technology Co. Ltd focuses on the research and development, and industrialization of gallium oxide power devices, a fourth-generation ultra-wide forbidden band semiconductor.

The company plans to launch the first prototype sample of commercial gallium oxide diode by the end of 2026, or, by 2027. It has already developed the world's first vertical gallium oxide MOSFET device of enrichment type, with a conduction current greater than 1 ampere and a breakdown voltage greater than 900 volts. The company plans to launch commercial products of gallium oxide power devices in early 2027.

In the field of ultra-wide forbidden-band semiconductors, Jiachi Power has completed the first iterative tape-out valid...