India, June 3 -- Shortly after Samsung announced HBM4E sample shipment has started, the memory giant has made another progress by showcasing a mock-up of its 8th-generation High Bandwidth Memory (HBM5) for the first time, at Computex 2026 in Taipei on June 2, according to Chosun Biz and Mirror Media.

As highlighted by Chosun Biz, Samsung plans to use base dies manufactured on its in-house 2nm foundry process for HBM5. According to SeDaily, HBM5 is being prepared in 12-layer, 16-layer, and 20-layer DRAM stack configurations, with mass production expected around 2028, following HBM4E.

The report adds that Samsung is also developing its next-generation 1d DRAM process following the current 1c node, which could be applied starting from HBM5...