India, July 29 -- Samsung Electronics has decided to apply its most advanced 2-nanometer process technology to its eighth-generation high-bandwidth memory (HBM5), a key component of artificial intelligence (AI) chips. The move is seen as a strategy to firmly secure a technological edge in the future HBM market.

Gu Jahum, head of technology development for the foundry business at Samsung Electronics and VP, said HBM5 is expected to process data more than 50% faster than HBM4E. To achieve that, the company plans to apply the latest process to the "base die," the pedestal that stacks multiple layers of DRAM, to boost both speed and power efficiency.

Samsung Electronics plans to use a 2-nanometer process based on Gate-All-Around (GAA) for H...