India, March 13 -- At 2026 SPIE Advanced Lithography + Patterning Conference, imec, a world-leading research and innovation hub in advanced semiconductor technologies, demonstrated that precise control of gas compositions during post-exposure EUV lithography steps can help in minimizing the required exposure dose, thereby unlocking higher wafer throughput.

In particular, improved dose response of metal-oxide photoresists (MORs) has been achieved when the EUV post-exposure bake step is performed under elevated oxygen concentrations.

Metal-oxide resists (MORs) have emerged as leading candidates for advanced EUV lithography applications, offering superior resolution, reduced line-edge roughness, and good EUV dose-to-size performance compar...