GaAs and InP substrate project approved in Chinese Zhejiang province
India, July 31 -- A high-end compound semiconductor substrate project with a total investment of RMB 2 billion (approximately USD 280 million) has been officially approved and will be established in Quzhou, Zhejiang Province, according to the Zhejiang Provincial Online Investment Project Approval and Supervision Platform.
The project will be developed by Vital Micro-Electronics Technology (Zhejiang) Co. Ltd, and is designed to deliver an annual production capacity of 3 million gallium arsenide (GaAs) substrates and 3 million indium phosphide (InP) substrates, for a combined output of 6 million wafers per year. Construction is scheduled to run from August 2026 to August 2029.
The company will upgrade and expand its existing manufacturing...
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