India, April 14 -- Gallium oxide - especially in its most stable β phase - is attracting strong interest as an ultra-wide bandgap (UWBG) semiconductor with the potential to redefine power electronics beyond the limits of silicon carbide (SiC) and gallium nitride (GaN).

With a bandgap energy of about 4.7-4.9 eV, significantly wider than typical wide bandgap materials (~3.3-3.4 eV), ; enables higher breakdown fields and superior power device performance that are crucial for efficient, high-voltage switching applications such as electric vehicles, renewable energy converters, and industrial power supplies.

A key metric in power electronics is Baliga's figure of merit (BFoM), which relates breakdown field to charge carrier mobility and...