India, June 18 -- CEA-Leti has announced a major advance in memory technology: the demonstration of ferroelectric RAM (FeRAM) scaled to the 22nm manufacturing node using an innovative 3D capacitor architecture.

The breakthrough, presented at the VLSI Conference in Honolulu, removes a long-standing density barrier that has kept FeRAM from competing with volatile memory-and opens the door to faster, more energy-efficient artificial intelligence (AI) at the edge.

By vertically integrating ferroelectric capacitors made from hafnium zirconium oxide (HZO) thin films, the team achieved memory cells that are 2.5 times smaller than standard SRAM at the same 22nm node, matching the density of SRAM at the much more advanced 10nm node. Moreover, un...