India, June 18 -- At the 2026 IEEE/JSAP Symposium on VLSI Technology and Circuits, imec, a world-leading research and innovation hub in advanced semiconductor technologies, in partnership with the lithography solution provider ASML, and semiconductor foundry TSMC, presented a novel, robust and scalable 300mm integration route for 2D-material based n and pFETs.

For the first time, scaled nFETs (implementing MoS2 as the channel material) and pFETs (either WS2 or WSe2-based) with 50nm contacted poly pitch (CPP) could be demonstrated, with good current-voltage characteristics. These results represent a crucial step in the lab-to-fab transition of 2D-material based transistors, envisioned for ultra-scaled logic as well as for back-end and waf...