India, Aug. 6 -- Kioxia Corp., a subsidiary of Kioxia Holdings Corp., and Sandisk Corp. have unveiled their next-generation Quad-Level-Cell (QLC) 3D flash memory technology, which delivers up to 60% increase in bit density compared to their 8th-generation, surpassing 37 Gb/mm² and setting the industry benchmark for bit density, performance and power efficiency.

Leveraging the companies' revolutionary CMOS directly Bonded to Array (CBA) technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment, the new generation improves read and write bandwidth compared to the 8th-generation 3D flash memory, and becomes the industry's first QLC 3D flash ...