ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,503, issued on June 16, was assigned to WASEDA UNIVERSITY (Tokyo). "Thermoelectric power generation device, thermoelectric power generation... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,504, issued on June 16, was assigned to TAIYO YUDEN Co. LTD. (Tokyo). "Vibration generating device for presenting haptic sensation using pi... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,505, issued on June 16, was assigned to SONY GROUP Corp. (Tokyo). "Piezoelectric coil and electronic apparatus" was invented by Shuta Kitad... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,506, issued on June 16, was assigned to ATTANA AB (Stockholm). "Piezoelectric resonator, a piezoelectric material for a piezoelectric reson... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,507, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Inverted wide base double magnetic tunnel ju... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,508, issued on June 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Magnetoresistive random access memory" was ... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,509, issued on June 16, was assigned to Kioxia Corp. (Tokyo). "Magnetic memory device" was invented by Masatoshi Yoshikawa (Tokyo). Accord... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,510, issued on June 16, was assigned to Kioxia Corp. (Tokyo). "Magnetic memory device and method for manufacturing the same" was invented b... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,511, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.). "MRAM anchor via" was invented by Oscar van d... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,512, issued on June 16, was assigned to Beijing Orient Institute of Measurement and Test (Beijing). "Low-magnetic-field gallium arsenide qu... Read More