ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,509, issued on June 16, was assigned to Kioxia Corp. (Tokyo).

"Magnetic memory device" was invented by Masatoshi Yoshikawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a three-terminal type memory cell. A first terminal is connected to a first conductor layer. A second terminal is connected to a second conductor layer. A third terminal is connected to a third conductor layer. The memory cell includes a fourth conductor connected to the first conductor layer, the second conductor layer, and the third conductor layer. A magnetoresistance effect element of the memory cell is coupled between the third conductor...