ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,511, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM anchor via" was invented by Oscar van der Straten (Guilderland Center, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) includes a first conductor and a magnetic tunnel junction (MTJ) having a bottom electrode. An anchor via connects the first conductor to the bottom electrode. The anchor via includes a via conductor encapsulated within a diffusion barrier. The diffusion barrier includes a conductive cap disposed between the via conductor and the bottom electrode." ...