US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof" (Japanese Inventor)

Posted On: 2026-08-05

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,753, issued on Aug. 4, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Superjunction silicon carbide semiconductor device having ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "SOI device structure for robust isolation" (Taiwanese Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,754, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "SOI device structure for robust isola... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,755, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method of fo... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventor)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,756, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device having nanos... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Aug. 4 for "Manufacturing method of integrated circuit structure" (Taiwanese Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,757, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG UN... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor device including a field effect transistor" (South Korean Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,758, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including a field effect ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor devices including a lower power interconnection line and methods of manufacturing the same" (South Korean Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,759, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices including a lower power ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,760, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufact... Read More

US Patent Issued to Infineon Technologies on Aug. 4 for "SiC MOSFET with reduced on-resistance" (Austrian Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,761, issued on Aug. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany). "SiC MOSFET with reduced on-resistance" was invented b... Read More

US Patent Issued to Applied Materials on Aug. 4 for "Carbon-containing cap layer for doped semiconductor epitaxial layer" (California Inventors)

Posted On: 2026-08-05

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ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,762, issued on Aug. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Carbon-containing cap layer for doped semiconductor ep... Read More

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US Patent Issued to FUJI ELECTRIC on Aug. 4 for "Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof" (Japanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "SOI device structure for robust isolation" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Aug. 4 for "Manufacturing method of integrated circuit structure" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor device including a field effect transistor" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor devices including a lower power interconnection line and methods of manufacturing the same" (South Korean Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

US Patent Issued to Infineon Technologies on Aug. 4 for "SiC MOSFET with reduced on-resistance" (Austrian Inventors)

US Patent Issued to Applied Materials on Aug. 4 for "Carbon-containing cap layer for doped semiconductor epitaxial layer" (California Inventors)