US Patent Issued to Infineon Technologies on Aug. 4 for "SiC MOSFET with reduced on-resistance" (Austrian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,761, issued on Aug. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"SiC MOSFET with reduced on-resistance" was invented by Ralf Siemieniec (Villach, Austria), Thomas Aichinger (Faak am See, Austria), Ravi Keshav Joshi (Klagenfurt, Austria) and Werner Schustereder (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for forming a SiC MOSFET are disclosed. In an example, the method includes forming a gate dielectric that adjoins a body region arranged in a semiconductor body, and forming a gate electrode on the gate dielectric....