US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,756, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having nanosheet transistor and methods of fabrication thereof" was invented by Yi-Chen Lo (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a plurality of semiconductor layers vertically stacked over a substrate, a source/drain feature in contact with each of the plurality of the semiconductor layers, an inner spacer disposed between two adjacent semiconductor la...