ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,690, issued on Aug. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same" ... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,691, issued on Aug. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same" ... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,692, issued on Aug. 4, was assigned to Changxin Memory Technologies Inc. (Hefei, China). "Semiconductor structure and forming method and ope... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,693, issued on Aug. 4, was assigned to Kioxia Corp. (Tokyo). "Oxide semiconductor device and oxide semiconductor memory device" was invented... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,694, issued on Aug. 4, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatuses including semiconductive pillar structures, and r... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,695, issued on Aug. 4, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device including structures in memory array region and... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,697, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Integrated circuit device, memory... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,698, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "3D memory device, measurement method thereof, a... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,699, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device and electronic sys... Read More
ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,700, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory devices and methods fo... Read More