US Patent Issued to Micron Technology on Aug. 4 for "Memory device including structures in memory array region and periperal circuitry region" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,695, issued on Aug. 4, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including structures in memory array region and periperal circuitry region" was invented by Si-Woo Lee (Boise, Idaho), Terrence B. Mcdaniel (Caldwell, Idaho), Guangjun Yang (Meridian, Idaho) and Vinay Nair (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes data lines; first structures located in a first region, electrically separated from each other, and including first conductive contacts coupled to the data lines; second conductive contacts...