US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "3D memory device, measurement method thereof, and film measurement device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,698, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"3D memory device, measurement method thereof, and film measurement device" was invented by Fengrui Li (Wuhan, China), Shuo Zhang (Wuhan, China), Yuanxiang Zou (Wuhan, China), Wei Zhang (Wuhan, China) and Yi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a stack structure including a first stack structure and a second stack structure over the first stack structure, and a barrier layer disposed in a first channel hole in the first stack structure."

The patent was filed on Dec. 30, 2022, under A...