ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,880, issued on Aug. 25, was assigned to STMicroelectronics International N.V. (Geneva). "Memory device of the phase-change type and method ... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,881, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ternary content-addressable memory ... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,882, issued on Aug. 25, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Integrated circuit including flash memory and CMOS logic circuitr... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,883, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatus containing memory array structures having multipl... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,884, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device and operating me... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,885, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Method for operating memory, memory and memor... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,886, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Word line bias during stripe erase in a memory devic... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,887, issued on Aug. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Operation methods of memory, memory and memor... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,888, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Operations on partially programmed blocks" was invented by ... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,889, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory device, memory system, memory controll... Read More