US Patent Issued to STMicroelectronics International on Aug. 25 for "Memory device of the phase-change type and method for reading such a device" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,880, issued on Aug. 25, was assigned to STMicroelectronics International N.V. (Geneva).

"Memory device of the phase-change type and method for reading such a device" was invented by Xavier Lecoq (Voiron, France), Alin Razafindraibe (Saint Martin d'Heres, France) and Christophe Forel (Saint-Egreve, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory cell to be read is associated with a phase-change reference memory cell placed in a SET state. The reference memory cell has a structure that is identical to that of the memory cell. A first voltage is applied to the memory cell to cause output of a first current. A second voltage ...