US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Memory device, memory system, memory controller and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,889, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, memory controller and operating method thereof" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China), Wen Luo (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure disclose a memory device, a memory system, a memory controller and an operating method, the memory device includes: a preset number of the memory cells form one code word, and the multiple storage bits correspond to multiple pages respectively; at least one page corresponds to mu...