US Patent Issued to AG MATERIALS TECHNOLOGY on Nov. 3 for "Nano-twinned ultra-thin metallic film structure and methods for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,334, issued on Nov. 3, was assigned to AG MATERIALS TECHNOLOGY Co. LTD. (Hsinchu City, Taiwan). "Nano-twinned ultra-thin metallic film struc... Read More

US Patent Issued to Max-Planck-Gesellschaft zur Forderung der Wissenschaften e. V. on Nov. 3 for "Thermal laser evaporation system" (German Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,335, issued on Nov. 3, was assigned to Max-Planck-Gesellschaft zur Forderung der Wissenschaften e. V. (Munich). "Thermal laser evaporation s... Read More

US Patent Issued to Applied Materials on Nov. 3 for "Substrate carrier to control temperature of substrate" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,336, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Substrate carrier to control temperature of substrate"... Read More

US Patent Issued to Joint Development on Nov. 3 for "Orthopedic implants having a subsurface level ceramic layer applied via bombardment" (Utah Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,337, issued on Nov. 3, was assigned to Joint Development Inc. (Salt Lake City). "Orthopedic implants having a subsurface level ceramic layer... Read More

US Patent Issued to SHIN-ETSU HANDOTAI on Nov. 3 for "Method for growing diamond layer and microwave plasma CVD apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,338, issued on Nov. 3, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo). "Method for growing diamond layer and microwave plasma CVD appar... Read More

US Patent Issued to Commissariat a l'Energie Atomique et aux Energies Alternatives on Nov. 3 for "Chemical vacuum deposition of a thin tungsten and/or molybdenum sulfide film method" (French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,340, issued on Nov. 3, was assigned to Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris). "Chemical vacuum deposition o... Read More

US Patent Issued to ASM IP Holding on Nov. 3 for "Method of forming SiOCN layer" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,341, issued on Nov. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method of forming SiOCN layer" was invented by Takashi Yo... Read More

US Patent Issued to Merck Patent on Nov. 3 for "Inherently ferroelectric Hf-Zr containing films" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,342, issued on Nov. 3, was assigned to Merck Patent GmbH (Darmstadt, Germany). "Inherently ferroelectric Hf-Zr containing films" was invente... Read More

US Patent Issued to KALARK NANOSTRUCTURE SCIENCES on Nov. 3 for "Method for tungsten-based thin film deposition via fabrication and decomposition of precursor metastable complexes (molecular species)" (Pennsylvania, New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,343, issued on Nov. 3, was assigned to KALARK NANOSTRUCTURE SCIENCES INC. (Doylestown, Pa.). "Method for tungsten-based thin film deposition... Read More

US Patent Issued to JUSUNG ENGINEERING on Nov. 3 for "Thin film formation method" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,344, issued on Nov. 3, was assigned to JUSUNG ENGINEERING Co. LTD. (South Korea). "Thin film formation method" was invented by Jeong Heo (Gw... Read More

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