US Patent Issued to Synopsys on Sept. 1 for "Josephson junction structures" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,393, issued on Sept. 1, was assigned to Synopsys Inc. (Sunnyvale, Calif.). "Josephson junction structures" was invented by Jamil Kawa (Camp... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Quantum device and method with tunable resonant frequency" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,394, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Quantum device and method with tunable reson... Read More

US Patent Issued to SK HYNIX on Sept. 1 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,395, issued on Sept. 1, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Semiconductor device and method for fabricating the same" ... Read More

US Patent Issued to International Business Machines on Sept. 1 for "Spike-timing-dependent plasticity using inverse resistivity phase-change material" (New York Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,396, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Spike-timing-dependent plasticity using inve... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Phase-change material (PCM) radio frequency (RF) switching device with novel spreader design" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,397, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase-change material (PCM) radio f... Read More

US Patent Issued to SHANGHAI IC R & D CENTER, SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER on Sept. 1 for "RRAM cell and fabrication method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,398, issued on Sept. 1, was assigned to SHANGHAI IC R & D CENTER Co. LTD. (Shanghai) and SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS I... Read More

US Patent Issued to Sumitomo Electric Industries on Sept. 1 for "Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,400, issued on Sept. 1, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan). "Silicon carbide epitaxial substrate and method o... Read More

US Patent Issued to Soitec on Sept. 1 for "Method for fabricating a polycrystalline silicon carbide carrier substrate" (French Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,401, issued on Sept. 1, was assigned to Soitec (Bernin, France). "Method for fabricating a polycrystalline silicon carbide carrier substrat... Read More

US Patent Issued to ASM IP Holding on Sept. 1 for "Method of forming an epitaxial layer" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,402, issued on Sept. 1, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method of forming an epitaxial layer" was invented by R... Read More

US Patent Issued to Northwestern University on Sept. 1 for "Methods for forming k-phase gallium oxide materials" (Illinois Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,403, issued on Sept. 1, was assigned to Northwestern University (Evanston, Ill.). "Methods for forming k-phase gallium oxide materials" was... Read More

• ««
• «
• 135599
• 135600
• 135601
• 135602
• 135603
• 135604
• 135605
• 135606
• 135607
• 135608
• »
• »»