US Patent Issued to SHANGHAI IC R & D CENTER, SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER on Sept. 1 for "RRAM cell and fabrication method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,398, issued on Sept. 1, was assigned to SHANGHAI IC R & D CENTER Co. LTD. (Shanghai) and SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER Co. LTD (Shanghai).

"RRAM cell and fabrication method therefor" was invented by Ao Guo (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is to provide a RRAM cell, comprising: two transistors which are coupled and resistive switching cells, and the number of the resistive switching cells is n; wherein electrodes of the resistive switching cells are connected in sequence to form a horizontal stack structure, and the same electrode is shared between any two ad...