US Patent Issued to Northwestern University on Sept. 1 for "Methods for forming k-phase gallium oxide materials" (Illinois Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,403, issued on Sept. 1, was assigned to Northwestern University (Evanston, Ill.).

"Methods for forming k-phase gallium oxide materials" was invented by Manijeh Razeghi (Wilmette, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming Kappa-phase gallium oxide materials are provided, including highly conductive and highly phase stable such materials. In embodiments, the method comprises exposing a surface of a substrate positioned in a metalorganic chemical vapor deposition (MOCVD) reactor to a gallium (Ga) precursor vapor, an indium (In) precursor vapor, an oxygen (O) precursor vapor, and a silicon (Si) precursor vapor, under conditi...