ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,956, issued on April 7, was assigned to SUMCO Corp. (Tokyo). "Vapor deposition device and vapor deposition method" was invented by Yu Minam... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,957, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate transfer apparatus and substrate transfer method" was inven... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,958, issued on April 7, was assigned to NISSAN CHEMICAL Corp. (Tokyo). "Wafer treatment method" was invented by Tomoya Ohashi (Toyama, Japa... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,959, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Temperature controlling method and substrate processing apparatus" wa... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,960, issued on April 7, was assigned to MIANYANG HKC OPTOELECTRONICS TECHNOLOGY Co. LTD. (Mianyang, China) and HKC CORPORATION LIMITED (Shen... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,961, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package including test pattern... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,962, issued on April 7, was assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC. (San Jose, Calif.). "System and method for bonding tr... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,963, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Methods of manufacturing semiconductor devic... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,964, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Hardmask integration for high aspect ratio applications" was invented... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,965, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "3D NAND memory device with isolation trenches... Read More