ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,958, issued on April 7, was assigned to NISSAN CHEMICAL Corp. (Tokyo).
"Wafer treatment method" was invented by Tomoya Ohashi (Toyama, Japan), Suguru Sassa (Toyama, Japan) and Noriaki Fujitani (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for de...