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US Patent Issued to Kioxia on Nov. 3 for "NAND flash memory executing high-speed mode read operation" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,815, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "NAND flash memory executing high-speed mode read operation" was invented by To... Read More


US Patent Issued to SK hynix on Nov. 3 for "Memory device for performing read operation and program verification operation" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,816, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory device for performing read operation and program ve... Read More


US Patent Issued to International Business Machines on Nov. 3 for "Nor decoder for large decode structures" (New York Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,817, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nor decoder for large decode structures" was i... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Circuits and methods for reducing memory power consumption" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,818, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Circuits and methods for reducing mem... Read More


US Patent Issued to Nuvoton Technology Corporation Japan on Nov. 3 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,819, issued on Nov. 3, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan). "Semiconductor memory device" was invented by At... Read More


US Patent Issued to QUALCOMM Incorproated on Nov. 3 for "Time multiplexing of cleanup and write for serial read write memory" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,820, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego). "Time multiplexing of cleanup and write for serial read write memo... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Systems and methods to mitigate cycle time degradation by NBTI effect on PDP SRAM" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,821, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Systems and methods to mitigate cycle... Read More


US Patent Issued to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION on Nov. 3 for "Computing-in-memory device sharing charges of bit lines to generate reference voltage and its operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,822, issued on Nov. 3, was assigned to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (Seoul, South Korea). "Computing-in-memory device s... Read More


US Patent Issued to QUALCOMM Incorproated on Nov. 3 for "Bit line charge sharing for SRAM dynamic power savings" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,823, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego). "Bit line charge sharing for SRAM dynamic power savings" was inven... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Self-selecting memory array with horizontal access lines" (Italian, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,824, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Self-selecting memory array with horizontal access lines" was... Read More