US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Circuits and methods for reducing memory power consumption" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,818, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Circuits and methods for reducing memory power consumption" was invented by Ryota Watanabe (Hsinchu City, Taiwan) and Hidemitsu Kojima (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a memory array including a plurality of memory cells, wherein a first portion of the memory array is accessed during a present cycle, and a second portion of the memory array is to be accessed during a next cycle. The memory circuit includes a decoder configured to provide a next address signal indicating an address of the ...