US Patent Issued to Nuvoton Technology Corporation Japan on Nov. 3 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,819, issued on Nov. 3, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan).

"Semiconductor memory device" was invented by Atsushi Mototani (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a first pull-down n-channel MOS transistor that includes: a drain connected to a word line; a source connected to a ground line; and a gate connected to a first node; a first series connection n-channel MOS transistor that includes: a drain connected to a power supply line; and a source connected to the first node; and a second series connection n-channel MOS transistor that includes: a drain connec...