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US Patent Issued to Kioxia on Nov. 3 for "Memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,795, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Memory system" was invented by Masahiko Nakayama (Yokohama Kawagawa, Japan) an... Read More


US Patent Issued to Renesas Electronics on Nov. 3 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,796, issued on Nov. 3, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device" was invented by Koichi Takeda (Tokyo) and T... Read More


US Patent Issued on Nov. 3 for "Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits containing magnetic Josephson junctions" (Maryland Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,797, issued on Nov. 3. "Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits con... Read More


US Patent Issued to UNITED MICROELECTRONICS on Nov. 3 for "Magnetoresistive random access memory system with source line and bit line compensation voltages" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,798, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Magnetoresistive random access memory system ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device including ferroelectric cell capacitor and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,799, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device including ferroelectric cell cap... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Slew rate control for memory device based on access line voltage" (California Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,800, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Slew rate control for memory device based on access line volt... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory device having 2-transistor vertical memory cell and shield structures" (Idaho, California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,801, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having 2-transistor vertical memory cell and sh... Read More


US Patent Issued on Nov. 3 for "Systems and methods for maintaining refresh operations of memory banks using a shared address path" (Texas Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,802, issued on Nov. 3. "Systems and methods for maintaining refresh operations of memory banks using a shared address path" was invented by ... Read More


US Patent Issued to Canon on Nov. 3 for "Memory control apparatus and method to refresh dram banks based on attribute information" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,803, issued on Nov. 3, was assigned to Canon K.K. (Tokyo). "Memory control apparatus and method to refresh dram banks based on attribute inf... Read More


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor system for performing an active operation using an active period control method" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,804, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor system for performing an active operation usin... Read More