US Patent Issued to Micron Technology on Nov. 3 for "Memory device having 2-transistor vertical memory cell and shield structures" (Idaho, California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,801, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having 2-transistor vertical memory cell and shield structures" was invented by Kamal M. Karda (Boise, Idaho), Haitao Liu (Boise, Idaho), Karthik Sarpatwari (Boise, Idaho), Durai Vishak Nirmal Ramaswamy (Boise, Idaho), Alessandro Calderoni (Boise, Idaho), Richard E Fackenthal (Carmichael, Calif.) and Duane R. Mills (Shingle Springs, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses in which one of such apparatus includes a first memory cell including a first transistor having a first channel region coupled between a da...