US Patent Issued to UNITED MICROELECTRONICS on Nov. 3 for "Magnetoresistive random access memory system with source line and bit line compensation voltages" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,798, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Magnetoresistive random access memory system with source line and bit line compensation voltages" was invented by Ting-Hao Chang (Kaohsiung City, Taiwan), Chien-Yu Ko (Tainan City, Taiwan), Cheng-Tung Huang (Kaohsiung City, Taiwan) and Wen-Liang Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A data writing capability enhancement system includes a magnetoresistive random access memory array, a first driving circuit, a second driving circuit, and an enhancement circuit. The first driving circuit is coupled to the magnetoresistive r...