ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,875, issued on April 7, was assigned to Sharp K.K. (Sakai City, Japan). "Display device" was invented by Hirohide Mimura (Sakai City, Japan... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,770, issued on April 7, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsi... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,771, issued on April 7, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Silicon carbide semiconductor device with trench gate and dummy gate... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,772, issued on April 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Vertical trench gate fet with split gate" was invented by Sunglyo... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,773, issued on April 7, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Trench sic power semiconductor device" was invented by M... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,774, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Jongc... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,775, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Source/drains in semiconductor devi... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,776, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet epitaxy with full bottom isolation... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,777, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Low temperature, high germanium, high boron SiGe:B pEPI with ti... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,778, issued on April 7, was assigned to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device, method... Read More