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US Patent Issued to NITTO DENKO on Nov. 3 for "Piezoelectric film, method of producing piezoelectric film, piezoelectric element, and piezoelectric device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,650, issued on Nov. 3, was assigned to NITTO DENKO Corp. (Ibaraki, Japan). "Piezoelectric film, method of producing piezoelectric film, piez... और पढ़ें


US Patent Issued to SEIKO EPSON on Nov. 3 for "Electronic device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,651, issued on Nov. 3, was assigned to SEIKO EPSON Corp. (Tokyo). "Electronic device" was invented by Hikaru Iwai (Matsukawa-machi, Japan), ... और पढ़ें


US Patent Issued to CANON on Nov. 3 for "Liquid ejection head and method of manufacturing liquid ejection head" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,652, issued on Nov. 3, was assigned to CANON K.K. (Tokyo). "Liquid ejection head and method of manufacturing liquid ejection head" was inven... और पढ़ें


US Patent Issued to Elastimed on Nov. 3 for "Strap having a portion of electro-active polymer, methods and mechanisms for making and using the same" (Israeli Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,653, issued on Nov. 3, was assigned to Elastimed Ltd. (Yokneam Ilit, Israel). "Strap having a portion of electro-active polymer, methods and... और पढ़ें


US Patent Issued to Everspin Technologies on Nov. 3 for "Methods for manufacturing magnetoresistive stack devices" (Arizona, California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,654, issued on Nov. 3, was assigned to Everspin Technologies Inc. (Chandler, Ariz.). "Methods for manufacturing magnetoresistive stack devic... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Method of manufacturing magnetoresistive random access memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,655, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Method of manufacturing magnetoresistive rando... और पढ़ें


US Patent Issued to YANGTZE DELTA GRADUATE SCHOOL OF BEIJING INSTITUTE OF TECHNOLOGY (JIAXING), BEIJING INSTITUTE OF TECHNOLOGY on Nov. 3 for "Fixed layer of magnetic tunnel junction, magnetic memory chip, and method for manufacturing magnetic tunnel junction" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,656, issued on Nov. 3, was assigned to YANGTZE DELTA GRADUATE SCHOOL OF BEIJING INSTITUTE OF TECHNOLOGY (JIAXING) (Jiaxing, China) and BEIJIN... और पढ़ें


US Patent Issued to Industrial Technology Research Institute on Nov. 3 for "Magnetic memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,657, issued on Nov. 3, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan). "Magnetic memory structure" was invented ... और पढ़ें


US Patent Issued to C12 Quantum Electronics on Nov. 3 for "Quantum component" (French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,658, issued on Nov. 3, was assigned to C12 Quantum Electronics (Paris). "Quantum component" was invented by Matthieu Desjardins (Paris), Wil... और पढ़ें


US Patent Issued to ORIGIN QUANTUM COMPUTING TECHNOLOGY (HEFEI) on Nov. 3 for "Quantum device, manufacturing method thereof, and quantum computer" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,659, issued on Nov. 3, was assigned to ORIGIN QUANTUM COMPUTING TECHNOLOGY (HEFEI) Co. LTD. (Anhui, China). "Quantum device, manufacturing m... और पढ़ें