US Patent Issued to Everspin Technologies on Nov. 3 for "Methods for manufacturing magnetoresistive stack devices" (Arizona, California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,654, issued on Nov. 3, was assigned to Everspin Technologies Inc. (Chandler, Ariz.).

"Methods for manufacturing magnetoresistive stack devices" was invented by Sanjeev Aggarwal (Scottsdale, Ariz.), Sarin Deshpande (San Jose, Calif.), Kerry Nagel (Scottsdale, Ariz.) and Santosh Karre (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive element may include a via providing an electrical connection between one or more metal regions and magnetoresistive devices. The via may include a transition metal layer, a tantalum-rich layer, and/or a cap layer. The transition metal layer may be formed by atomic layer deposition. Addition...