US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Method of manufacturing magnetoresistive random access memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,655, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of manufacturing magnetoresistive random access memory device" was invented by Kilho Lee (Suwon-si, South Korea), Yongjae Kim (Suwon-si, South Korea) and Kiseok Suh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a magnetoresistive memory device includes: forming, sequentially, a magnetic tunnel junction (MTJ) structure and a metal layer on a substrate in first and second cell regions; performing a first oxidation process on the metal layer in the first and second cell regions to form a first metal oxide...