ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,741, issued on Oct. 20, was assigned to FUJIFILM Corp. (Tokyo). "Piezoelectric film" was invented by Yoshinori Tamada (Minamiashigara, Japa... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,742, issued on Oct. 20, was assigned to Everspin Technologies Inc. (Chandler, Ariz.). "Method of integration of a magnetoresistive structur... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,744, issued on Oct. 20, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan). "Magnetoresistive element and magnetic memory... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,745, issued on Oct. 20, was assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY (Seoul, South Korea). "Spin logic device... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,746, issued on Oct. 20, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multi-tapered MRAM device structure" was inv... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,748, issued on Oct. 20, was assigned to FUJITSU Ltd. (Kawasaki, Japan). "Quantum device and method for controlling quantum device" was inve... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,749, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device with laterally formed memory cells" was inven... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,750, issued on Oct. 20, was assigned to Intel Corp. (Santa Clara, Calif.). "Optimized phase change memory structure to improve nucleation t... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,751, issued on Oct. 20, was assigned to ams-OSRAM International GmbH (Regensburg, Germany). "Growth substrate and method for manufacturing ... Read More
ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,752, issued on Oct. 20, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method for depositing phosphorus containing silicon lay... Read More