US Patent Issued to Intel on Oct. 20 for "Optimized phase change memory structure to improve nucleation time variation" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,750, issued on Oct. 20, was assigned to Intel Corp. (Santa Clara, Calif.).

"Optimized phase change memory structure to improve nucleation time variation" was invented by Lu Liu (Milpitas, Calif.), Hemant P. Rao (Fremont, Calif.) and Kumar R. Virwani (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices having optimized phase change memory (PCM) structures to improve nucleation time variation and methods for forming the phase change memory structures. The PCM structures are composed of layers including a first electrode layer, a PCM layer having a first interface with the first electrode layer comprising a first electrode/PC...