US Patent Issued to International Business Machines on Oct. 20 for "Multi-tapered MRAM device structure" (New York, Utah Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,746, issued on Oct. 20, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multi-tapered MRAM device structure" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Chih-Chao Yang (Glenmont, N.Y.), Ashim Dutta (Clifton Park, N.Y.), Wu-Chang Tsai (Albany, N.Y.), Ailian Zhao (Slingerlands, N.Y.), Pei-I Wang (Clifton Park, N.Y.) and Shravana Kumar Katakam (Lehi, Utah).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) includes a pillar structure having a bottom electrode and a magnetic tunnel junction (MTJ) having a reference layer, a free layer and a tunnel barrier disposed bet...