Publication

Byline

Location

US Patent Issued to Intel NDTM US on Nov. 3 for "Method for pillar bending improvement by cut tiers pattern implementation" (Chinese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,272, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Method for pillar bending improvement by cut tiers pattern ... और पढ़ें


US Patent Issued to TEXAS INSTRUMENTS on Nov. 3 for "Nonvolatile memory with UV attenuating structural arrangement" (Texas Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,273, issued on Nov. 3, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Nonvolatile memory with UV attenuating structural arrangement" was ... और पढ़ें


US Patent Issued to Winbond Electronics on Nov. 3 for "Flash memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,274, issued on Nov. 3, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Flash memory device and method for manufacturing ... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device including vertically stacked peripheral circuit regions" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,275, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Memory device including vertically stacked ... और पढ़ें


US Patent Issued to GLOBALFOUNDRIES SINGAPORE on Nov. 3 for "Circuit structure and related multi-time programmable (MTP) memory cell" (Singaporean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,276, issued on Nov. 3, was assigned to GLOBALFOUNDRIES SINGAPORE PTE LTD (Singapore). "Circuit structure and related multi-time programmable... और पढ़ें


US Patent Issued to EMEMORY TECHNOLOGY on Nov. 3 for "Level shifter" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,277, issued on Nov. 3, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan). "Level shifter" was invented by Chien-Han Wu (Hsinchu Cou... और पढ़ें


US Patent Issued to Kioxia on Nov. 3 for "Semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,278, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage device" was invented by Hideto Takekida (Nagoya Aichi, J... और पढ़ें


US Patent Issued to SK hynix on Nov. 3 for "Semiconductor memory device and manufacturing method of a semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,279, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device and manufacturing method of a se... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor devices and data storage systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,280, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and data storage systems... और पढ़ें


US Patent Issued to Sandisk Technologies on Nov. 3 for "Stairless three-dimensional memory device and method of making the same by forming replacement word lines" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,281, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stairless three-dimensional memory device and method o... और पढ़ें