US Patent Issued to Kioxia on Nov. 3 for "Semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,278, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device" was invented by Hideto Takekida (Nagoya Aichi, Japan), Yosuke Murakami (Mie Mie, Japan), Keisuke Nakatsuka (Kobe Hyogo, Japan) and Yefei Han (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device of an embodiment includes a first conductive layer, a second conductive layer, a first conductive pillar, a first semiconductor layer, and a first storage layer. The first conductive layer extends in a first direction. The second conductive layer is along the first conductive layer in a third direction intersecting the firs...