US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device including vertically stacked peripheral circuit regions" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,275, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device including vertically stacked peripheral circuit regions" was invented by Changhun Kim (Suwon-si, South Korea) and Jaeick Son (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, and more particularly, to a memory device having a three-dimensional structure are provided. The memory device various example embodiments includes a cell region and a peripheral circuit region that at least partially overlaps the cell region when viewed in plan view. The peripheral circuit region includes a first sub-peripher...